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        b aa6 www.irf.com 1
 
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www.irf.com 3   
   (  7   !          1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 150 c j t = 25 c j 1 10 100 1000 5 6 7 8 9 10 11 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 0 20 40 60 80 100 0.1 1 10 100 1000 f, frequency (khz) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 40w triangular wave: clamp voltage: 80% of rated (  :
 
4 www.irf.com     !    
    " # !         -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 54 c i = a 27 c i = a 13.5 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c
 
www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 54 c i = a 27 c i = a 13.5 c 0 10 20 30 40 50 0.0 1.0 2.0 3.0 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 27a cc ge j c         " #   $ # $ " #   %&#
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 !  0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 27a cc c 8 ? 1 10 100 0 2000 4000 6000 8000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res )  4 ' )  7 ? )
 
6 www.irf.com 0 10 20 30 40 50 60 0.0 1.0 2.0 3.0 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge   %&#
      %( 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c 8 ?
 
www.irf.com 7       
d.u.t. 50v l v * c  * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v    !   # ( +         +  480f 960v    t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e )      ( 2# ! 50v driver* 1000v d.u.t. i c c v    l    ( +   
 
 
8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03 
  !     ! !   lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 123 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain lead assignments hexfet 1 - gate 2 - drain 3 - source 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector 
      example: as s e mb le d on ww 35, 2000 lot code 5657 with assembly t his is an irfpe30 in the as sembly line "h" 035h logo int ernational rect ifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free"


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